Modeling of Nano-Transistor Using 14-Nm Technology Node

Latest process technologies in transistor development demonstrate massive changes in the size of transistor chip. In this chapter, a 14-nm technology node is used to model nanosize transistor. The 14-nm technology node consists of multiple numbers of carbon nanotube. Carbon nanotube is a very good energy efficient and low-cost material. Carbon nanotube demonstrates excellent characteristics in metallic and semiconducting characteristics by analyzing electrical properties. At first, the nanotube device physics and material properties are briefly explained in this chapter. Further, a nanotube device is designed for semiconducting properties. The gate length of nanotube is 14 nm which is placed on the gate channel. Finally, the model of 14-nm nano-transistor will be demonstrated for low-energy consumption which can be considered as a better replacement of CMOS

Design of carbon nanotube field effect transistor (CNTFET) small signal model

The progress of Carbon Nanotube Field Effect Transistor (CNTFET) devices has facilitated the trimness of mobile phones, computers and all other electronic devices. CNTFET devices contribute to model these electronics instruments that require designing the devices. This research consists of the design and verification of the CNTFET device's small signal model. Scattering parameters (S-parameters) is extracted from the CNTFET model to construct equivalent small model circuit. Current sources, capacitors and resistors are involved to evaluate this equivalent circuit. S-parameters and small signal models are elaborated to analyze using a technique to form the small signal equivalent circuit model. In this design modeling process, at first intrinsic device's Y-parameters are determined. After that series of impedances are calculated. At last, Y-parameters model are transformed to add parasitic capacitances. The analysis result shows the acquiring high frequency performances are obtained from this equivalent circuit

Modeling of a carbon nanotube sensing device

A sensing device is modeled and discussed in this paper. The modeling is done by using carbon nanotubes. This carbon nanotube based sensing device makes it possible produce huge amount of nano chips as a disposable cartridge for diagnostic purposes. Modeling of nano-electrode, characterization and electrochemical detection of DNA hybridization is discussed here. The results shows that the importance of diagnostics with demonstrated characteristics of high sensitivity, reliability and inexpensive micro-fabrication for cost effectiveness

Small band-gap-based CNT for modeling of nano sensor

Modeling phenomena of small band-gap Carbon Nanotube (CNT) is analyzed in this paper. Device physics of CNT is studied and do the calculation of sub-band for zigzag CNT to model small band-gap tubes. Each carbon nanotube is illustrated as a single graphite sheet turned round into a cylindrical shape so that the arrangement is one dimensional with axial proportion. A comparison is made with the current literature to show that the proposed chirality CNT with small band-gap which performs the modeling of nano sensor. Furthermore, a sensing device is modeled and discussed in this paper. This carbon nanotube based sensing device makes it possible produce huge amount of nano chips as a disposable cartridge for diagnostic purposes. The optimum CNT is proposed in this paper to model a nano-electrode device. This research outcome shows that the importance of identification with verified uniqueness of high reliability and economical micro-fabrication for cost effectiveness

Hexagonal structure hexapod robot: developing a method for omni-directional navigation

In this paper, we propose a method that allows a hexapod robot to navigate omni-directionally with hexagonal structure. Typical body structures for hexapod robot are analyzed. Hexapod robot frequently navigates various directions over variety of surfaces. To enable locomotion in rough surface, hexapod must be able to stably move in any direction. A comparative study, based on different model of hexapod for omni-directional navigation, concludes that the hexagonal hexapod robot can be able to navigate omni-directionally on the complex surface. Finally, a method is developed for omni-directional navigation of the hexapod robot

Optimum performance of carbon nanotube field effect transistor

Phenomenological predictions have been elucidated in this paper. The predictions are elaborated for the field effect transistor using carbon nanotube (CNT) technology. CNTs have small band gap compare to other traditional semiconductor technologies. The modeling of a single wall nanotube with optimum bandgap for the designing of the carbon nanotube (CNTFET) is the aim of this work. Analysis of I-V characteristics of CNTFET with the drain current-voltage analytical relation enables the lower energy consumption from the proposed design. In this research, the optimum carbon nanotube (CNTs) is analyzed where the bandgap is 0.45eV as well as the diameter is 1.95nm. Modeling of CNTFET will be useful for semiconductor industries in order to manufacture the nano scale device

CNTFET inverter: a high voltage gain logic gate

Conventional CMOS technology provides a lot of opportunities in the field of electronics device. But presently, carbon nanotube field effect transistor (CNTFET) is a new technology for the application in the field of electronic device. Due to the limitation of the size of CMOS, CNTFETs are the promising substitute due to its nano scale size. CNTFET also shows the high stability, low power circuit design, high signal to noise margin (SNM) and high gain in the circuit design. A novel design of CNTFET based inverter with an optimum chiral vector is proposed in this paper. PSPICE platform is used to model and simulation this CNTFET inverter circuit. The proposed CNTFET inverter circuit is investigated based on noise margin characteristics. A maximum voltage gain of 45dB is observed from NCNTFET of the inverter and a high noise margin of 400mV and a low noise margin of 309mV are achieved from the proposed inverters. This approach is a useful technique for fabricating integrated logic devices and circuits based on CNTFETs